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    NXP Semiconductors BAS86 Schottky barrier single diode BAS86 All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2012. All rights reserved Product data sheet 25 July 2012 4 / 9 1.2 0.8 0.4 0 VF (V) IF (mA) 103 102 10 1 10-1 mld357 (1) (2) (3) (1) (2) (3) (1) Tamb = 125 °C (2) Tamb = 85 °C (3) Tamb = 25 °C Fig. 1. Forward current as a function of forward voltage; typical values mgc686 105 IR 104 (nA) 103 102 10-1 0 10 1 50 V) 10 20 30 40 VR ( (1) (2) (3) (1) Tamb = 85 °C (2) Tamb = 25 °C (3) Tamb = ?40 °C Fig. 2. Reverse current as a function of reverse voltage; typical values mgc687 0 0 50 12 Cd (pF) 4 8 10 20 30 40 VR (V) Tamb = 25 °C; f = 1 MHz Fig. 3. Diode capacitance as a function of reverse voltage; typical values 00 50 100 150 200 250 50 100 150 IF(AV) (mA) Tamb (°C) mra540 FR4 PCB, standard footprint Fig. 4. Average forward current as a function of ambient temperature; derating curve 8. Test information |